SIHB053N60E-GE3
Vishay Siliconix
Vishay Siliconix
E SERIES POWER MOSFET D2PAK (TO-
$6.62
Available to order
Reference Price (USD)
1+
$6.62000
500+
$6.5538
1000+
$6.4876
1500+
$6.4214
2000+
$6.3552
2500+
$6.289
Exquisite packaging
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Discover SIHB053N60E-GE3, a versatile Transistors - FETs, MOSFETs - Single solution from Vishay Siliconix, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 54mOhm @ 26.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3722 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 278W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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