BTS244ZE3062AATMA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 55V 35A TO263-5
$5.34
Available to order
Reference Price (USD)
1,000+
$2.19265
Exquisite packaging
Discount
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Upgrade your electronic designs with BTS244ZE3062AATMA2 by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, BTS244ZE3062AATMA2 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id: 2V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
- FET Feature: Temperature Sensing Diode
- Power Dissipation (Max): 170W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-5-2
- Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
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