SCT3040KRC14
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 55A TO247-4L
$56.59
Available to order
Reference Price (USD)
1+
$56.59000
500+
$56.0241
1000+
$55.4582
1500+
$54.8923
2000+
$54.3264
2500+
$53.7605
Exquisite packaging
Discount
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Discover high-performance SCT3040KRC14 from Rohm Semiconductor, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, SCT3040KRC14 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 262W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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