BUK6228-55C,118
NXP USA Inc.
NXP USA Inc.
PFET, 31A I(D), 55V, 0.044OHM, 1
$0.22
Available to order
Reference Price (USD)
1+
$0.22000
500+
$0.2178
1000+
$0.2156
1500+
$0.2134
2000+
$0.2112
2500+
$0.209
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
BUK6228-55C,118 by NXP USA Inc. is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, BUK6228-55C,118 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 29mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 1340 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Panjit International Inc.
PJQ4460AP-AU_R2_000A1
Diodes Incorporated
DMN4035L-13
Diodes Incorporated
BSS84Q-7-F
Rohm Semiconductor
RS1E301GNTB1
IXYS
IXFN48N50Q
STMicroelectronics
STD3NK50Z-1
onsemi
CPH6434-TL-E
IXYS
IXFH20N80P
Alpha & Omega Semiconductor Inc.
AOY2N60
Infineon Technologies