BUK763R9-60E,118
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 60V 100A D2PAK
$0.92
Available to order
Reference Price (USD)
800+
$0.82170
1,600+
$0.74250
2,400+
$0.69300
5,600+
$0.65835
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with BUK763R9-60E,118 by Nexperia USA Inc., a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, BUK763R9-60E,118 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7480 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 263W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Nexperia USA Inc.
PMV20ENR
Infineon Technologies
IPS60R210PFD7SAKMA1
Infineon Technologies
IPD25N06S4L30ATMA2
STMicroelectronics
STL100N10F7
Nexperia USA Inc.
BUK7Y2R0-40HX
Vishay Siliconix
IRLIZ34GPBF
Torex Semiconductor Ltd
XP234N0801TR-G
Toshiba Semiconductor and Storage
TK46E08N1,S1X
Vishay Siliconix
SQA401EEJ-T1_GE3
onsemi