BUK7C10-75AITE,118
NXP Semiconductors
NXP Semiconductors
NEXPERIA BUK7C10-75 - 75A, 75V,
$1.41
Available to order
Reference Price (USD)
1+
$1.41000
500+
$1.3959
1000+
$1.3818
1500+
$1.3677
2000+
$1.3536
2500+
$1.3395
Exquisite packaging
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Discover BUK7C10-75AITE,118, a versatile Transistors - FETs, MOSFETs - Single solution from NXP Semiconductors, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
- FET Feature: Current Sensing
- Power Dissipation (Max): 272W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
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