BUK7Y2R5-40HX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
$2.49
Available to order
Reference Price (USD)
1,500+
$0.66083
3,000+
$0.61677
7,500+
$0.58593
10,500+
$0.56390
Exquisite packaging
Discount
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Discover BUK7Y2R5-40HX, a versatile Transistors - FETs, MOSFETs - Single solution from Nexperia USA Inc., a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 3.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
- Vgs (Max): +20V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 190W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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