BUK9611-80E,118
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 80V 75A D2PAK
$2.40
Available to order
Reference Price (USD)
800+
$0.89693
1,600+
$0.81048
2,400+
$0.75645
5,600+
$0.71863
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with BUK9611-80E,118, a premium Transistors - FETs, MOSFETs - Single from Nexperia USA Inc.. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust BUK9611-80E,118 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 48.8 nC @ 5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 182W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
NXP USA Inc.
PMXB75UPE147
Vishay Siliconix
SI1499DH-T1-E3
onsemi
FQD16N25CTM
Infineon Technologies
BSP320SL6433
Nexperia USA Inc.
PMPB10XNEZ
STMicroelectronics
STW48N60M2-4
onsemi
NTD4855NT4H
Infineon Technologies
BSC029N025SG
STMicroelectronics
STL51N3LLH5
onsemi