FQD16N25CTM
onsemi
onsemi
MOSFET N-CH 250V 16A DPAK
$1.25
Available to order
Reference Price (USD)
2,500+
$0.45852
5,000+
$0.43686
12,500+
$0.42139
25,000+
$0.41914
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose FQD16N25CTM by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with FQD16N25CTM inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 270mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
BSP320SL6433
Nexperia USA Inc.
PMPB10XNEZ
STMicroelectronics
STW48N60M2-4
onsemi
NTD4855NT4H
Infineon Technologies
BSC029N025SG
STMicroelectronics
STL51N3LLH5
onsemi
2SK4065-E
Vishay Siliconix
SI7121ADN-T1-GE3
Infineon Technologies
IPA65R190C7XKSA1
Microchip Technology