BUK9M3R3-40HX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 40V 80A LFPAK33
$1.75
Available to order
Reference Price (USD)
1+
$1.75000
500+
$1.7325
1000+
$1.715
1500+
$1.6975
2000+
$1.68
2500+
$1.6625
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with BUK9M3R3-40HX, a reliable Transistors - FETs, MOSFETs - Single by Nexperia USA Inc.. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, BUK9M3R3-40HX meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 3766 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 101W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK33
- Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Related Products
Vishay Siliconix
SI4636DY-T1-GE3
Microchip Technology
LND150N3-G-P013
onsemi
ECH8419-TL-H
Infineon Technologies
IPP60R600P6XKSA1
Toshiba Semiconductor and Storage
TK380A65Y,S4X
Infineon Technologies
IRLR2705TRLPBF
IXYS
IXFN140N30P
Taiwan Semiconductor Corporation
TSM70N380CH C5G
Infineon Technologies
IPD60R800CEAUMA1
Nexperia USA Inc.