BVSS123LT1G
onsemi
onsemi
MOSFET N-CH 100V 170MA SOT23-3
$0.41
Available to order
Reference Price (USD)
3,000+
$0.09812
6,000+
$0.09291
15,000+
$0.08508
30,000+
$0.07987
75,000+
$0.07205
150,000+
$0.07063
Exquisite packaging
Discount
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Enhance your circuit performance with BVSS123LT1G, a premium Transistors - FETs, MOSFETs - Single from onsemi. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust BVSS123LT1G for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 225mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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