SI2333DDS-T1-BE3
Vishay Siliconix
Vishay Siliconix
P-CHANNEL 12-V (D-S) MOSFET
$0.44
Available to order
Reference Price (USD)
1+
$0.44000
500+
$0.4356
1000+
$0.4312
1500+
$0.4268
2000+
$0.4224
2500+
$0.418
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with SI2333DDS-T1-BE3 by Vishay Siliconix, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, SI2333DDS-T1-BE3 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta), 1.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Infineon Technologies
IRFS4010TRL7PP
onsemi
FQD2N100TM
Panjit International Inc.
PJA3439_R1_00001
Nexperia USA Inc.
PMV30XPAR
Fairchild Semiconductor
FDD8896-F085
Infineon Technologies
IPB80N06S2L07ATMA3
Diodes Incorporated
ZVN4525E6TA
Vishay Siliconix
SI2337DS-T1-E3
Infineon Technologies
IRLR2908TRPBF
Nexperia USA Inc.