BYVB32-150HE3_A/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 150V 18A TO263AB
$0.94
Available to order
Reference Price (USD)
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$0.94050
500+
$0.931095
1000+
$0.92169
1500+
$0.912285
2000+
$0.90288
2500+
$0.893475
Exquisite packaging
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Choose the BYVB32-150HE3_A/I from Vishay General Semiconductor - Diodes Division for superior Diodes - Rectifiers - Arrays solutions within the Discrete Semiconductor Products range. These diodes are optimized for precision and durability, making them suitable for high-stakes applications. The BYVB32-150HE3_A/I features excellent thermal performance and high surge current tolerance, ensuring reliability in harsh environments. Vishay General Semiconductor - Diodes Division is a name you can trust for cutting-edge semiconductor technology. Don t hesitate contact us now for more information and to request a quote!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io) (per Diode): 18A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 150 V
- Operating Temperature - Junction: -65°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
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