C3M0015065D
Wolfspeed, Inc.
Wolfspeed, Inc.
SICFET N-CH 650V 120A TO247-3
$45.82
Available to order
Reference Price (USD)
1+
$45.82000
500+
$45.3618
1000+
$44.9036
1500+
$44.4454
2000+
$43.9872
2500+
$43.529
Exquisite packaging
Discount
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Discover C3M0015065D, a versatile Transistors - FETs, MOSFETs - Single solution from Wolfspeed, Inc., a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
- Vgs(th) (Max) @ Id: 3.6V @ 15.5mA
- Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 15 V
- Vgs (Max): +15V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 5011 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 416W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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