C3M0160120J
Wolfspeed, Inc.
Wolfspeed, Inc.
SICFET N-CH 1200V 17A TO263-7
$10.00
Available to order
Reference Price (USD)
1+
$10.00000
500+
$9.9
1000+
$9.8
1500+
$9.7
2000+
$9.6
2500+
$9.5
Exquisite packaging
Discount
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Discover C3M0160120J, a versatile Transistors - FETs, MOSFETs - Single solution from Wolfspeed, Inc., a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
- Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V
- Vgs (Max): +15V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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