CAB008M12GM3
Wolfspeed, Inc.
Wolfspeed, Inc.
1200V 2B HALF-BRIDGE
$247.08
Available to order
Reference Price (USD)
1+
$247.08000
500+
$244.6092
1000+
$242.1384
1500+
$239.6676
2000+
$237.1968
2500+
$234.726
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the next level of semiconductor technology with Wolfspeed, Inc. s CAB008M12GM3, part of the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are built to deliver exceptional performance with features like high current capacity, minimal power loss, and enhanced durability. Suitable for a wide array of applications including LED lighting, automotive systems, and renewable energy solutions. Get in touch with us today to request a sample or inquire about bulk pricing for CAB008M12GM3.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
- Vgs(th) (Max) @ Id: 3.6V @ 46mA
- Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 13.6nF @ 800V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
Related Products
onsemi
FDMC8097AC
Diodes Incorporated
DMN10H6D2LFDB-7
Advanced Linear Devices Inc.
ALD1105PBL
onsemi
NTJD1155LT2G
Advanced Linear Devices Inc.
ALD310704ASCL
onsemi
FDS6910
Nexperia USA Inc.
BUK7K5R1-30E,115
Infineon Technologies
BSZ215CHXTMA1
Diodes Incorporated
DMN2040LTS-13
Rohm Semiconductor