DMN10H6D2LFDB-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V~100V U-DFN2020
$0.10
Available to order
Reference Price (USD)
1+
$0.09563
500+
$0.0946737
1000+
$0.0937174
1500+
$0.0927611
2000+
$0.0918048
2500+
$0.0908485
Exquisite packaging
Discount
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Optimize your electronic circuits with Diodes Incorporated s DMN10H6D2LFDB-7, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how DMN10H6D2LFDB-7 can elevate your design and operational efficiency.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
- Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 50V
- Power - Max: 700mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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