CDM22010-650 SL
Central Semiconductor Corp
Central Semiconductor Corp
MOSFET N-CH 650V 10A TO220
$2.21
Available to order
Reference Price (USD)
1+
$2.11000
50+
$1.70000
100+
$1.53000
500+
$1.19000
Exquisite packaging
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Upgrade your electronic designs with CDM22010-650 SL by Central Semiconductor Corp, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, CDM22010-650 SL ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 1168 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 156W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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