CLF1G0035-100P
NXP USA Inc.
NXP USA Inc.
RF SMALL SIGNAL FIELD-EFFECT TRA
$202.54
Available to order
Reference Price (USD)
1+
$202.54000
500+
$200.5146
1000+
$198.4892
1500+
$196.4638
2000+
$194.4384
2500+
$192.413
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Unlock next-gen RF performance with CLF1G0035-100P from NXP USA Inc.. These MOSFETs feature innovative gallium nitride (GaN) technology for higher efficiency in compact form factors, revolutionizing telecom infrastructure and defense electronics. Their lead-free compliance meets global environmental standards. Let s discuss your application needs contact our sales team now!
Specifications
- Product Status: Active
- Transistor Type: HEMT
- Frequency: 3.5GHz
- Gain: 12.5dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 330 mA
- Power - Output: 100W
- Voltage - Rated: 150 V
- Package / Case: SOT-1228A
- Supplier Device Package: LDMOST
Related Products
Ampleon USA Inc.
BLS9G2934L-400U
Ampleon USA Inc.
BLF183XRSU
NXP USA Inc.
BLF7G10L-250,112
Ampleon USA Inc.
BLP25M710Z
MACOM Technology Solutions
MRF166C
Renesas Electronics America Inc
NE3511S02-T1C-A
Ampleon USA Inc.
BLF978PU
NXP USA Inc.
MRF101AN-START
Infineon Technologies
BF2040E6814HTSA1
STMicroelectronics