CSD17575Q3
Texas Instruments
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
$1.18
Available to order
Reference Price (USD)
2,500+
$0.43260
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose CSD17575Q3 by Texas Instruments. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with CSD17575Q3 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 108W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
- Package / Case: 8-PowerTDFN
Related Products
Diodes Incorporated
DMN6040SFDE-7
Diodes Incorporated
VN10LP
Diodes Incorporated
DMN53D0LQ-7
Infineon Technologies
IPB009N03LGATMA1
Infineon Technologies
IRF7425TRPBF
Toshiba Semiconductor and Storage
TK5A53D(STA4,Q,M)
Comchip Technology
CMS04N06Y-HF
Toshiba Semiconductor and Storage
TK34A10N1,S4X
Nexperia USA Inc.
PSMN020-100YS,115
onsemi