TK34A10N1,S4X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 100V 34A TO220SIS
$1.62
Available to order
Reference Price (USD)
1+
$1.55000
50+
$1.25000
100+
$1.12500
500+
$0.87500
1,000+
$0.72500
2,500+
$0.70000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
TK34A10N1,S4X by Toshiba Semiconductor and Storage is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, TK34A10N1,S4X ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 4V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
Related Products
Nexperia USA Inc.
PSMN020-100YS,115
onsemi
FDP33N25
Vishay Siliconix
SQJ431AEP-T1_BE3
IXYS
IXTA120N04T2
Vishay Siliconix
IRFR430ATRPBF
Renesas Electronics America Inc
TBB1002BMTL-E
Infineon Technologies
SPD03N50C3ATMA1
Infineon Technologies
BSP149L6906HTSA1
Vishay Siliconix
IRFPS43N50KPBF
Infineon Technologies