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CSD18535KTTT

Texas Instruments
CSD18535KTTT Preview
Texas Instruments
MOSFET N-CH 60V 200A/279A DDPAK
$4.17
Available to order
Reference Price (USD)
1+
$4.17000
500+
$4.1283
1000+
$4.0866
1500+
$4.0449
2000+
$4.0032
2500+
$3.9615
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 279A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6620 pF @ 30 V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DDPAK/TO-263-3
  • Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA

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