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CSD19502Q5B

Texas Instruments
CSD19502Q5B Preview
Texas Instruments
MOSFET N-CH 80V 100A 8VSON
$2.78
Available to order
Reference Price (USD)
1+
$2.78000
500+
$2.7522
1000+
$2.7244
1500+
$2.6966
2000+
$2.6688
2500+
$2.641
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 4.1mOhm @ 19A, 10V
  • Vgs(th) (Max) @ Id: 3.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 40 V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 195W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-VSON-CLIP (5x6)
  • Package / Case: 8-PowerTDFN

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