CSD19505KCS
Texas Instruments
Texas Instruments
MOSFET N-CH 80V 150A TO220-3
$3.61
Available to order
Reference Price (USD)
1+
$3.12000
10+
$2.79300
50+
$2.51860
100+
$2.29960
500+
$1.87246
1,000+
$1.58775
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of CSD19505KCS, a premium Transistors - FETs, MOSFETs - Single from Texas Instruments. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, CSD19505KCS is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 6V
- Vgs(th) (Max) @ Id: 3.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
onsemi
MTA2N60E
Infineon Technologies
IPP114N03LGHKSA1
Microchip Technology
LND250K1-G
Panjit International Inc.
PJMF280N60E1_T0_00001
onsemi
NTMFS5C410NLT3G
Nexperia USA Inc.
PSMN012-60MSX
Infineon Technologies
SPP35N10
Infineon Technologies
IRF1010NSTRLPBF
Nexperia USA Inc.
BUK7608-55A,118
Vishay Siliconix