CSD19531KCS
Texas Instruments
Texas Instruments
MOSFET N-CH 100V 100A TO220-3
$2.34
Available to order
Reference Price (USD)
1+
$1.99000
10+
$1.79900
50+
$1.60920
100+
$1.45140
500+
$1.13582
1,000+
$0.94650
2,500+
$0.91495
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of CSD19531KCS, a premium Transistors - FETs, MOSFETs - Single from Texas Instruments. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, CSD19531KCS is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 7.7mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3870 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 214W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Toshiba Semiconductor and Storage
TK4R3A06PL,S4X
onsemi
NTD3813NT4G
Vishay Siliconix
SIHFZ48RS-GE3
Rohm Semiconductor
RQ5L020SNTL
Toshiba Semiconductor and Storage
TK6A80E,S4X
Rectron USA
RM16P60LD
Infineon Technologies
BSZ035N03LSGATMA1
Vishay Siliconix
SISS08DN-T1-GE3
Infineon Technologies
IRFS3206TRRPBF
Renesas Electronics America Inc