CSD19532KTTT
Texas Instruments
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
$2.99
Available to order
Reference Price (USD)
1+
$2.99000
500+
$2.9601
1000+
$2.9302
1500+
$2.9003
2000+
$2.8704
2500+
$2.8405
Exquisite packaging
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Boost your electronic applications with CSD19532KTTT, a reliable Transistors - FETs, MOSFETs - Single by Texas Instruments. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, CSD19532KTTT meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 5.6mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 3.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DDPAK/TO-263-3
- Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
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