CSD19537Q3T
Texas Instruments
Texas Instruments
MOSFET N-CH 100V 50A 8VSON
$1.63
Available to order
Reference Price (USD)
1+
$1.63000
500+
$1.6137
1000+
$1.5974
1500+
$1.5811
2000+
$1.5648
2500+
$1.5485
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose CSD19537Q3T by Texas Instruments. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with CSD19537Q3T inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 14.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSON (3.3x3.3)
- Package / Case: 8-PowerVDFN
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