CSD25501F3
Texas Instruments
Texas Instruments
MOSFET P-CH 20V 3.6A 3LGA
$0.10
Available to order
Reference Price (USD)
1+
$0.10472
500+
$0.1036728
1000+
$0.1026256
1500+
$0.1015784
2000+
$0.1005312
2500+
$0.099484
Exquisite packaging
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Experience the power of CSD25501F3, a premium Transistors - FETs, MOSFETs - Single from Texas Instruments. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, CSD25501F3 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 76mOhm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id: 1.05V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.33 nC @ 4.5 V
- Vgs (Max): -20V
- Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-LGA (0.73x0.64)
- Package / Case: 3-XFLGA
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