BSC886N03LSGATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 13A/65A TDSON
$0.84
Available to order
Reference Price (USD)
5,000+
$0.25334
10,000+
$0.24396
25,000+
$0.23884
Exquisite packaging
Discount
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Experience the power of BSC886N03LSGATMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, BSC886N03LSGATMA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 39W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-1
- Package / Case: 8-PowerTDFN
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