CSD25501F3T
Texas Instruments
Texas Instruments
MOSFET P-CH 20V 3.6A 3LGA
$0.93
Available to order
Reference Price (USD)
250+
$0.18852
500+
$0.15600
750+
$0.13000
1,250+
$0.11700
Exquisite packaging
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Discover CSD25501F3T, a versatile Transistors - FETs, MOSFETs - Single solution from Texas Instruments, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 76mOhm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id: 1.05V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.33 nC @ 4.5 V
- Vgs (Max): -20V
- Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-LGA (0.73x0.64)
- Package / Case: 3-XFLGA
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