HUF76639S3ST
onsemi
onsemi
MOSFET N-CH 100V 51A D2PAK
$2.41
Available to order
Reference Price (USD)
800+
$1.35546
1,600+
$1.24943
2,400+
$1.16786
5,600+
$1.12708
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with HUF76639S3ST, a reliable Transistors - FETs, MOSFETs - Single by onsemi. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, HUF76639S3ST meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Panjit International Inc.
PJS6403_S1_00001
NXP USA Inc.
PMV62XN215
Toshiba Semiconductor and Storage
TK5Q65W,S1Q
IXYS
IXFN132N50P3
Infineon Technologies
IPP055N08NF2SAKMA1
onsemi
NTD23N03RG
STMicroelectronics
STP11N65M5
Microchip Technology
APT20M11JVFR
Toshiba Semiconductor and Storage
TJ60S04M3L(T6L1,NQ
Rohm Semiconductor