DCX114YUQ-13R-F
Diodes Incorporated
Diodes Incorporated
PREBIAS TRANSISTOR SOT363 T&R 10
$0.06
Available to order
Reference Price (USD)
1+
$0.05699
500+
$0.0564201
1000+
$0.0558502
1500+
$0.0552803
2000+
$0.0547104
2500+
$0.0541405
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Introducing Diodes Incorporated's DCX114YUQ-13R-F advanced Pre-Biased Transistor Arrays engineered for modern electronics. These BJT arrays provide ready-to-use solutions with internal resistor networks, significantly reducing design complexity and BOM costs. Application highlights include power supply circuits, display drivers, and microcontroller interfaces in automotive, aerospace, and industrial environments. Technical features comprise low VCE(sat), tight current gain matching, and RoHS compliance for environmental safety. Diodes Incorporated stands behind every DCX114YUQ-13R-F unit with rigorous quality testing. Streamline your procurement process contact our sales team via the inquiry form for personalized assistance!
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
Related Products
Rohm Semiconductor
EMD4T2R
Nexperia USA Inc.
PEMB3,115
Nexperia USA Inc.
NHUMD13F
Rohm Semiconductor
EMG5T2R
Nexperia USA Inc.
PEMH2,315
Diodes Incorporated
ACX143ZUQ-7R
onsemi
NSBC123JDXV6T5G
Nexperia USA Inc.
NHUMB13X
Nexperia USA Inc.
PEMD13,115
Diodes Incorporated