DDTA115GE-7-F
Diodes Incorporated
Diodes Incorporated
TRANS PREBIAS PNP 150MW SOT523
$0.06
Available to order
Reference Price (USD)
3,000+
$0.06538
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DDTA115GE-7-F by Diodes Incorporated is a premier choice in the Discrete Semiconductor Products category. These Transistors - Bipolar (BJT) - Single, Pre-Biased are designed for precision and efficiency, featuring high gain bandwidth, low distortion, and excellent thermal management. Perfect for RF applications, sensor interfaces, and control systems. Diodes Incorporated stands for quality and innovation. Reach out to us for expert advice and competitive pricing!
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): -
- Resistor - Emitter Base (R2): 100 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250 MHz
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-523
- Supplier Device Package: SOT-523
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