RN1108,LF(CT
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.1A SSM
$0.21
Available to order
Reference Price (USD)
1+
$0.21000
500+
$0.2079
1000+
$0.2058
1500+
$0.2037
2000+
$0.2016
2500+
$0.1995
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RN1108,LF(CT from Toshiba Semiconductor and Storage is a premium selection in the Discrete Semiconductor Products market. Specifically designed as Transistors - Bipolar (BJT) - Single, Pre-Biased, these components provide exceptional reliability and efficiency. Features include fast switching speeds, high voltage tolerance, and compact design. They are perfect for applications in telecommunications, medical devices, and renewable energy systems. Choose Toshiba Semiconductor and Storage for cutting-edge semiconductor technology. Get in touch for pricing and availability details!
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 22 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
Related Products
onsemi
MMUN2130LT1G
Rohm Semiconductor
DTC043XMT2L
Toshiba Semiconductor and Storage
RN2417,LXHF
Rohm Semiconductor
DTD123YCT116
Diodes Incorporated
DDTC122LE-7
Diodes Incorporated
DDTA114TCA-7-F
NXP USA Inc.
PDTB143EUF
Diodes Incorporated
DDTA144ECA-7
Toshiba Semiconductor and Storage
RN1112,LXHF(CT
Rohm Semiconductor