DF11MR12W1M1PB11BPSA1
Infineon Technologies
Infineon Technologies
MOSFET MODULE 1200V
$163.34
Available to order
Reference Price (USD)
1+
$163.34000
500+
$161.7066
1000+
$160.0732
1500+
$158.4398
2000+
$156.8064
2500+
$155.173
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance DF11MR12W1M1PB11BPSA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let Infineon Technologies s DF11MR12W1M1PB11BPSA1 enhance your projects with superior quality and performance.
Specifications
- Product Status: Last Time Buy
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
- Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V
- Power - Max: 20mW
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1B-2
Related Products
Rohm Semiconductor
US6M2TR
Rohm Semiconductor
SH8M24TB1
Fairchild Semiconductor
FDB12N50UTM
Diodes Incorporated
DMN33D8LDWQ-7
Diodes Incorporated
ZXMC4559DN8TA
onsemi
FDMS3606S
Vishay Siliconix
SIA910EDJ-T1-GE3
Diodes Incorporated
2N7002VAC-7
Nexperia USA Inc.
PMGD290XN,115
Panjit International Inc.