PMGD290XN,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET 2N-CH 20V 0.86A 6TSSOP
$0.46
Available to order
Reference Price (USD)
3,000+
$0.10890
6,000+
$0.10230
15,000+
$0.09570
30,000+
$0.08778
75,000+
$0.08448
Exquisite packaging
Discount
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Boost your project s performance with Nexperia USA Inc. s PMGD290XN,115, a standout in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components offer superior features such as high efficiency, low noise, and extended lifespan, making them suitable for a variety of advanced applications. From IoT devices to energy-efficient systems, PMGD290XN,115 provides the reliability you need. Don t wait reach out to us today for more information and to request a sample of PMGD290XN,115.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 860mA
- Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 20V
- Power - Max: 410mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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