DF23MR12W1M1PB11BPSA1
Infineon Technologies
Infineon Technologies
MOSFET MODULE 1200V
$113.86
Available to order
Reference Price (USD)
1+
$113.86000
500+
$112.7214
1000+
$111.5828
1500+
$110.4442
2000+
$109.3056
2500+
$108.167
Exquisite packaging
Discount
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Discover high-performance DF23MR12W1M1PB11BPSA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let Infineon Technologies s DF23MR12W1M1PB11BPSA1 enhance your projects with superior quality and performance.
Specifications
- Product Status: Last Time Buy
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
- Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
- Power - Max: 20mW
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1B-2
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