DMC1229UFDB-13
Diodes Incorporated
Diodes Incorporated
MOSFET N/P-CH 12V U-DFN2020-6
$0.16
Available to order
Reference Price (USD)
10,000+
$0.17490
Exquisite packaging
Discount
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The DMC1229UFDB-13 by Diodes Incorporated is a standout in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Engineered for excellence, these components offer unmatched reliability and performance. Features such as high voltage tolerance, low gate charge, and superior thermal management make them a preferred choice. Applications range from industrial automation to consumer electronics. Don t miss out on the opportunity to integrate DMC1229UFDB-13 into your systems contact us for more details and pricing.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
- Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
- Power - Max: 1.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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