DMG3415UFY4Q-7
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 16V 2.5A X2-DFN2015
$0.44
Available to order
Reference Price (USD)
3,000+
$0.17631
6,000+
$0.16669
15,000+
$0.15706
30,000+
$0.14551
75,000+
$0.14070
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of DMG3415UFY4Q-7, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, DMG3415UFY4Q-7 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 16 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 39mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 282 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 650mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X2-DFN2015-3
- Package / Case: 3-XDFN
Related Products
onsemi
MMBF1374T1
Vishay Siliconix
SI8823EDB-T2-E1
Vishay Siliconix
IRF510PBF
Infineon Technologies
IRF1407PBF
Vishay Siliconix
SI3483CDV-T1-GE3
Panjit International Inc.
PJD16P04_L2_00001
Rohm Semiconductor
RD3S100AAFRATL
Fairchild Semiconductor
SFP9620
Renesas Electronics America Inc
2SK2858-T1-A
onsemi