DMG4468LK3-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 9.7A TO252-3
$0.63
Available to order
Reference Price (USD)
2,500+
$0.23812
5,000+
$0.22438
12,500+
$0.21062
25,000+
$0.20100
Exquisite packaging
Discount
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Enhance your circuit performance with DMG4468LK3-13, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust DMG4468LK3-13 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 16mOhm @ 11.6A, 10V
- Vgs(th) (Max) @ Id: 1.95V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.68W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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