DMN4800LSSQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 8.6A 8SO
$0.58
Available to order
Reference Price (USD)
2,500+
$0.21908
5,000+
$0.20643
12,500+
$0.19378
25,000+
$0.18492
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with DMN4800LSSQ-13, a reliable Transistors - FETs, MOSFETs - Single by Diodes Incorporated. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, DMN4800LSSQ-13 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.46W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
onsemi
FCH077N65F-F085
Infineon Technologies
IRF9388TRPBF
Fairchild Semiconductor
RF1K49157
Vishay Siliconix
SI8821EDB-T2-E1
Vishay Siliconix
SI1021R-T1-GE3
Vishay Siliconix
SIHP15N60E-GE3
onsemi
NDD60N360U1T4G
Infineon Technologies
IRL3705ZPBF
onsemi
FDB7030BL-ON
Toshiba Semiconductor and Storage