DMG6301UDW-13
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 25V 0.24A SOT363
$0.07
Available to order
Reference Price (USD)
10,000+
$0.07115
Exquisite packaging
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Boost your project s performance with Diodes Incorporated s DMG6301UDW-13, a standout in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components offer superior features such as high efficiency, low noise, and extended lifespan, making them suitable for a variety of advanced applications. From IoT devices to energy-efficient systems, DMG6301UDW-13 provides the reliability you need. Don t wait reach out to us today for more information and to request a sample of DMG6301UDW-13.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 240mA
- Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V
- Power - Max: 300mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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