DMG6301UDW-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 25V 0.24A SOT363
$0.45
Available to order
Reference Price (USD)
1+
$0.45000
500+
$0.4455
1000+
$0.441
1500+
$0.4365
2000+
$0.432
2500+
$0.4275
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMG6301UDW-7 by Diodes Incorporated is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Diodes Incorporated s DMG6301UDW-7 be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 240mA
- Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V
- Power - Max: 300mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
Related Products
Advanced Linear Devices Inc.
ALD114904ASAL
onsemi
FDG6321C
Panjit International Inc.
PJQ5848_R2_00001
Texas Instruments
CSD75207W15
Vishay Siliconix
SIZ240DT-T1-GE3
Vishay Siliconix
SIZ250DT-T1-GE3
Wolfspeed, Inc.
CAS350M12BM3
Micro Commercial Co
SIX3134K-TP
Vishay Siliconix
SIA517DJ-T1-GE3
General Electric