GE12047CCA3
General Electric
General Electric
1200V 475A SIC HALF-BRIDGE MODUL
$1,925.00
Available to order
Reference Price (USD)
1+
$1925.00000
500+
$1905.75
1000+
$1886.5
1500+
$1867.25
2000+
$1848
2500+
$1828.75
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The GE12047CCA3 by General Electric is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let General Electric s GE12047CCA3 be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 475A
- Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V
- Vgs(th) (Max) @ Id: 4.5V @ 160mA
- Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds: 29.3nF @ 600V
- Power - Max: 1250W
- Operating Temperature: -55°C ~ 150°C (Tc)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
Related Products
onsemi
FTCO3V455A1
Infineon Technologies
BSD235CH6327XTSA1
onsemi
NVMFD5C446NLT1G
STMicroelectronics
STS8DN6LF6AG
Panjit International Inc.
PJX8603_R1_00001
Diodes Incorporated
DMN2004VK-7
onsemi
NTMFD4C85NT1G
Vishay Siliconix
SI5515CDC-T1-E3
Diodes Incorporated
BSS84V-7
Nexperia USA Inc.