DMG6602SVTQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET N/P-CH 30V TSOT26
$0.40
Available to order
Reference Price (USD)
3,000+
$0.12090
6,000+
$0.11430
15,000+
$0.10770
30,000+
$0.09978
75,000+
$0.09648
Exquisite packaging
Discount
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The DMG6602SVTQ-7 from Diodes Incorporated is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, DMG6602SVTQ-7 delivers consistent quality. Contact us now to learn more and secure your supply of Diodes Incorporated s premium semiconductors.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
- Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
- Power - Max: 840mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-26
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