DMN2010UDZ-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 20V 11A U-DFN2535-6
$0.90
Available to order
Reference Price (USD)
3,000+
$0.43080
6,000+
$0.40440
15,000+
$0.39120
Exquisite packaging
Discount
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The DMN2010UDZ-7 from Diodes Incorporated is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, DMN2010UDZ-7 offers the reliability you need. Contact us now to discuss how we can support your project requirements with Diodes Incorporated s cutting-edge solutions.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 24V
- Current - Continuous Drain (Id) @ 25°C: 11A
- Rds On (Max) @ Id, Vgs: 7mOhm @ 5.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2665pF @ 10V
- Power - Max: 700mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2535-6
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