DMG8822UTS-13
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 20V 4.9A 8TSSOP
$0.20
Available to order
Reference Price (USD)
2,500+
$0.20955
Exquisite packaging
Discount
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The DMG8822UTS-13 from Diodes Incorporated is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, DMG8822UTS-13 delivers consistent quality. Contact us now to learn more and secure your supply of Diodes Incorporated s premium semiconductors.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 841pF @ 10V
- Power - Max: 870mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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