RJK03P9DPA-00#J5A
Renesas Electronics America Inc
Renesas Electronics America Inc
POWER, N-CHANNEL MOSFET
$1.36
Available to order
Reference Price (USD)
1+
$1.36000
500+
$1.3464
1000+
$1.3328
1500+
$1.3192
2000+
$1.3056
2500+
$1.292
Exquisite packaging
Discount
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Optimize your electronic circuits with Renesas Electronics America Inc s RJK03P9DPA-00#J5A, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how RJK03P9DPA-00#J5A can elevate your design and operational efficiency.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 20A, 50A
- Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 10V
- Power - Max: 15W, 35W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WFDFN Exposed Pad
- Supplier Device Package: 8-WPAK
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