DMHC4035LSDQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 31V 40V SO-8
$0.52
Available to order
Reference Price (USD)
2,500+
$0.55680
Exquisite packaging
Discount
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The DMHC4035LSDQ-13 by Diodes Incorporated is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Diodes Incorporated s DMHC4035LSDQ-13 be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Active
- FET Type: 2 N and 2 P-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.7A (Ta)
- Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V, 65mOhm @ 4.2A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 4.5V, 5.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 574pF @ 20V, 587pF @ 20V
- Power - Max: 1.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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