DMN1008UFDF-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 12V 12.2A 6UDFN
$0.52
Available to order
Reference Price (USD)
10,000+
$0.14001
30,000+
$0.12971
50,000+
$0.12542
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance DMN1008UFDF-13 from Diodes Incorporated, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, DMN1008UFDF-13 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 995 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
Related Products
Fairchild Semiconductor
FQD5N50CTM
onsemi
FDPF390N15A
Alpha & Omega Semiconductor Inc.
AOWF095A60
Vishay Siliconix
IRFL214TRPBF
Microchip Technology
APT29F80J
Infineon Technologies
IPW50R350CP
onsemi
NTD4910N-35G
Diodes Incorporated
DMTH3004LK3Q-13
Infineon Technologies
IPD90P04P4L04ATMA2
Panjit International Inc.